Solid-state imaging element and electronic device

ABSTRACT

An imaging device and an electronic apparatus including an imaging device are provided. The imaging device includes a substrate and a first pixel including a first region of a first photoelectric conversion element, a first region of a second photoelectric conversion element, wherein the first and second photoelectric conversion elements are formed in the substrate, and a first vertical transistor connected to the first region of the first photoelectric conversion element. A second pixel includes a second region of the first photoelectric conversion element, a second region of the second photoelectric conversion element, and a second vertical transistor connected to the second region of the first photoelectric conversion element. The imaging device also includes a first floating diffusion. The first floating diffusion stores charges from the first and second regions of the first photoelectric conversion element in the first and second pixels. The imaging device includes a photoelectric conversion film disposed above the substrate.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a national stage application under 35 U.S.C. 371 andclaims the benefit of PCT Application No. PCT/JP2017/010847 having aninternational filing date of 17 Mar. 2017, which designated the UnitedStates, which PCT application claims the benefit of Japanese PriorityPatent Application JP 2016-070060 filed Mar. 31, 2016, the entirecontents of each of which are incorporated herein by reference.

TECHNICAL FIELD

The present disclosure relates to a solid-state imaging element and anelectronic device, in particular, relates to a solid-state imagingelement of a vertical spectral type capable of generating respectivecolor signals of red (R), green (G), and blue (B) from one pixel region,and to an electronic device.

BACKGROUND ART

Such a solid-state imaging element of a vertical spectral type isproposed to be capable of generating a plurality of color signals fromone pixel region by laminating a plurality of photoelectric conversionportions (photodiodes (PDs), etc.) in a depth direction of a substrate.

The solid-state imaging element of the vertical spectral type hasmerits, for example, that a fake color is not easily generated becausede-mosaic processing is not necessary and light utilization efficiencyis higher than that of a solid-state imaging element in related art thatgenerates a color signal of one of R, G, and B from one pixel region.

Hitherto, there is a technology for sharing a floating diffusion (FD)for realizing fine processing of a pixel with a plurality of pixels inthe solid-state imaging element, and a configuration for sharing the FDwith a plurality of pixels is proposed also to the solid-state imagingelement of the vertical spectral type (for example, see PTL 1).

FIG. 1 shows an example of a configuration of the solid-state imagingelement of the vertical spectral type sharing the FD with a plurality ofpixels.

A solid-state imaging element 10 is a rear-surface irradiation type thatlight is incident from a rear-surface side (lower side in the diagram).A photoelectric conversion film (G) 12-1, which performs photoelectricconversion according to a wavelength of a G component of incident light,is formed in a pixel 1 of the solid-state imaging element 10 on theoutside of a rear-surface of a Si substrate 11. A PD (B) 13-1 thatperforms photoelectric conversion according to a wavelength of a Bcomponent of the incident light and a PD (R) 14-1 that performsphotoelectric conversion according to a wavelength of an R component ofthe incident light are laminated in order from the rear-surface sidethereof in the Si substrate 11.

A vertical transistor (Tr) 16-1 is connected to the PD (B) 13-1. Aplanar Tr 17-1 is formed on a front-surface side (top side in thediagram) of the PD (R) 14-1.

Similarly, in a pixel 2, a photoelectric conversion film (G) 12-2 isformed on the outside of the rear surface of the Si substrate 11. A PD(B) 13-2 and a PD (R) 14-2 are laminated in order from the rear-surfaceside thereof in the Si substrate 11.

A vertical Tr 16-2 is connected to the PD 13-2. A planar Tr 17-2 isformed on a front-surface side of the PD (R) 14-2.

Further, an FD 15 is formed between the pixels. For example, an FD 15-2is formed between the pixels 1 and 2.

In the pixel 1 of the solid-state imaging element 10, chargesphotoelectrically converted by the PD (B) 13-1 are transmitted andstored in the FD 15-2 via the vertical Tr 16-1, as shown by a solidarrow. Further charges photoelectrically converted by the PD (R) 14-1are transmitted and stored in the FD 15-1 via the planar Tr 17-1.

Moreover, in the pixel 2, charges photoelectrically converted by the PD13-2 (B) are transmitted and stored in an FD 15-3 via the vertical Tr16-2. Further, charges photoelectrically converted by the PD (R) 14-2are transmitted and stored in the FD 15-2 via the planar Tr 17-2.

That is, in the solid-state imaging element 10, the PD (B) 13-1 and thePD (R) 14-2 which are formed in different depths of the Si substrate 11in the adjacent pixels 1 and 2 and have different wavelengths of lightfor photoelectric conversion, respectively, are configured to share theFD 15-2.

CITATION LIST Patent Literature

PTL 1: JP 2010-114323A

SUMMARY OF INVENTION Technical Problem

In the configuration of the solid-state imaging element 10 shown in FIG.1, a transfer region of the vertical Tr 16 is adjacent to a transferregion of the planar Tr 17. Therefore, simultaneous individualoptimization is difficult and it is disadvantageous for fine processing.Further, when the vertical Tr 16-1 is turned on in a state in whichcharges are stored in the PD (R) 14-2, as shown by a broken arrow in thediagram, short-circuit of charges may be generated which indicates anevent for erroneously reading the charges in the PD (R) 14-2 by thevertical Tr 16-1, and thereby color mixture may occur.

Further, the PD (B) 13 and the PD (R) 14 with different wavelengths oflight for photoelectric conversion share the FD 15. Therefore, theconversion efficiency for every color is not optimized. Since the PD (B)13 and the PD (R) 14 with different wavelengths of light forphotoelectric conversion share the FD 15, an amplifier Tr (not shown) atthe post stage of the FD 15 is not individually optimized for the PD (B)13 and the PD (R) 14.

The present disclosure is devised in consideration of these and otherproblems, and it is possible to realize the fine processing of pixelsand the optimization of the conversion efficiency and the amplifier Tr.

Solution to Problem

According to embodiments of the present disclosure, there is provided animaging device including a substrate and a third photoelectricconversion film disposed above the substrate. A first pixel includes afirst region of a first photoelectric conversion film, a first region ofa second photoelectric conversion film, the first and secondphotoelectric conversion films formed in the substrate, and a firstvertical transistor connected to the first region of the firstphotoelectric conversion film. A second pixel includes a second regionof the first photoelectric conversion film, a second region of thesecond photoelectric conversion film, the first and second photoelectricconversion films formed in the substrate, and a second verticaltransistor connected to the second region of the first photoelectricconversion film. The imaging device also includes a first floatingdiffusion. The first floating diffusion stores charges from the firstand second regions of the first photoelectric conversion film of thefirst and second pixels. A portion of each region of the firstphotoelectric conversion film of the respective pixels is between alight incident surface of the substrate and the vertical transistor forthe respective pixel.

According to further embodiments of the present disclosure, there isprovided an electronic apparatus that includes an imaging device and acontroller that controls operation of the imaging device. The imagingdevice includes a substrate and a third photoelectric conversion filmdisposed above the substrate. A first pixel includes a first region of afirst photoelectric conversion film, a first region of a secondphotoelectric conversion film, the first and second photoelectricconversion films formed in the substrate, and a first verticaltransistor connected to the first region of the first photoelectricconversion film. A second pixel includes a second region of the firstphotoelectric conversion film, a second region of the secondphotoelectric conversion film, the first and second photoelectricconversion films formed in the substrate, and a second verticaltransistor connected to the second region of the first photoelectricconversion film. The imaging device also includes a first floatingdiffusion. The first floating diffusion stores charges from the firstand second regions of the first photoelectric conversion film of thefirst and second pixels. A portion of the each region of the firstphotoelectric conversion film of the respective pixels is between alight incident surface of the substrate and the vertical transistor forthe respective pixel.

Advantageous Effects of Invention

According to embodiments of the present disclosure, it is possible torealize the fine processing of pixels and the optimization of theconversion efficiency and the amplifier Tr.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a cross-sectional view showing an example of a configurationof a solid-state imaging element of a vertical spectral type in relatedart.

FIG. 2 is a block diagram showing a first configuration example of asolid-state imaging element to which the present disclosure is applied.

FIG. 3 is a plan view showing a configuration example of the solid-stateimaging element shown in FIG. 2.

FIG. 4 is a cross-sectional view showing a configuration example of thesolid-state imaging element shown in FIG. 2.

FIG. 5 is a cross-sectional view showing a configuration example of thesolid-state imaging element shown in FIG. 2.

FIG. 6 is a plan view showing a second configuration example of thesolid-state imaging element to which the present disclosure is applied.

FIG. 7 is a plan view showing a third configuration example of thesolid-state imaging element to which the present disclosure is applied.

FIG. 8 is a diagram showing a manufacturing process of the solid-stateimaging element shown in FIG. 2.

FIG. 9 is a diagram showing a manufacturing process of the solid-stateimaging element shown in FIG. 2.

FIG. 10 is a diagram showing a usage example of the solid-state imagingelement to which the present disclosure is applied.

DESCRIPTION OF EMBODIMENTS

Hereinbelow, a specific description is given of best modes (hereinbelow,referred to as embodiments) for embodying the present disclosure.

First Embodiment

A description is given of a first configuration example (firstembodiment) of a solid-state imaging element to which the presentdisclosure is applied with reference to FIGS. 2 to 5.

FIG. 2 is a block diagram showing a configuration example of one pixelof a solid-state imaging element 20 according to the first embodiment.However, FIG. 2 does not show a predetermined cross-section of thesolid-state imaging element 20.

FIG. 3 is a plan view of three pixels adjacent in the horizontaldirection of the solid-state imaging element 20. FIG. 4 is across-sectional view along a line segment AA′ in FIG. 3. FIG. 5 is across-sectional view along a line segment BB′ in FIG. 3.

The solid-state imaging element 20 is configured such that two adjacentpixels share an FD.

A photoelectric conversion film (G) 22 having sensitivity to a Gcomponent of incident light is formed on the outside of a rear-surfaceof the Si substrate 21 in each pixel of the solid-state imaging element20, a photoelectric conversion region that, for example, includes aphotoelectric conversion element or a PD (B) 27 with sensitivity to a Bcomponent of the incident light and a photoelectric conversion regionthat, for example, includes a photoelectric conversion element or a PD(R) 30 with sensitivity to an R component of the incident light arelaminated in order from the rear-surface side in the Si substrate 11. Anon-chip lens 33 is formed on a rear-surface side (bottom side in thediagram) of the photoelectric conversion film (G) 22.

Hereinbelow, the photoelectric conversion film (G) 22 in the pixel 1 is,for example, referred to as the photoelectric conversion film (G) 22-1.In accordance with at least some embodiments of the present disclosure,the photoelectric conversion film 22 is continuous and extends over aplurality of pixels. Accordingly, each pixel can be associated with adifferent photoelectric conversion film 22 region that is provided as adiscrete section of a photoelectric conversion film, or with aphotoelectric conversion film region that is a portion of aphotoelectric conversion film that extends over a plurality of pixels.Other components are also similar thereto.

A top electrode 23 and a bottom electrode 24 are formed on the top andthe bottom of the photoelectric conversion film (G) 22 so as to sandwichthe photoelectric conversion film (G) 22. A through-electrode 25 isconnected to the bottom electrode 24. A vertical Tr 28 is connected tothe PD (B) 27. A planar Tr 31 is formed on a front-surface side of thePD (R) 30.

Further, an FD 26 for storing charges from the photoelectric conversionfilm (G) 22, an FD 29 for storing charges from the PD (B) 27, and an FD32 for storing charges from the PD (R) 30 are formed between pixels onthe front-surface side in the Si substrate 21. The FDs 26, 29, and 32are shared by two adjacent pixels, respectively. Hereinbelow, the FD 29formed between the pixels 1 and 2 is, for example, referred to as an FD29-12. The FDs 26 and 32 are also similar thereto.

For example, as shown in FIG. 4, the FD 29-12 formed between the pixels1 and 2 is shared by the pixels 1 and 2. Therefore, chargesphotoelectrically converted by a PD (B) 27-1 in the pixel 1 aretransmitted and stored in the FD 29-12 via a vertical Tr 28-1 in thesolid-state imaging element 20, as shown by a solid arrow. Chargesphotoelectrically converted by a PD (B) 27-2 in the pixel 2 adjacent tothe pixel 1 are also transmitted and stored in the FD 29-12 via avertical Tr 28-2.

Moreover, the FD 32-23 formed between pixels 2 and 3 are, for example,shared by the pixels 2 and 3. Therefore, in the solid-state imagingelement 20, charges photoelectrically converted by a PD (R) 30-2 in thepixel 2 are transmitted and stored in an FD 32-23 via a planar Tr 31-2.Charges photoelectrically converted by a PD (R) 30-3 in a pixel 3adjacent to the pixel 2 are also transmitted and stored in the FD 32-23via a planar Tr 31-3.

Note that the FD 26 that stores the charges from the photoelectricconversion film (G) 22 is not shared by a plurality of pixels, and isformed for every pixel. However, the FD 26 may be shared by a pluralityof pixels.

With the solid-state imaging element 20, a pixel transistor after the FDcan be also shared, and the fine processing of the pixel can be thusdeveloped. Further, since a transfer region of the vertical Tr 28 can beseparated from a transfer region of the planar Tr 31, the vertical Tr 28and the planar Tr 31 each can be simultaneously optimized, therebyobtaining an advantage for the fine processing of the pixel. Inaddition, it is possible to suppress the color mixture caused by theshort-circuit of charges from the adjacent pixel, which can be happenedwith the related configuration.

Furthermore, it is possible to optimize the conversion efficiency andthe amplifier transistor for every color by sharing the FD with the PDs(B) 27 and the PDs (R) 30, which are adjacent pixels formed at equaldepths in the Si substrate 21 and have an equal wavelength of light forphotoelectric conversion.

Second Embodiment

Next, a description is given of a second configuration example (secondembodiment) of a solid-state imaging element to which the presentdisclosure is applied with reference to FIG. 6.

FIG. 6 is a plan view of six pixels of a solid-state imaging element 50according to the second embodiment. A configuration example of one pixelof the solid-state imaging element 50 is similar to that of thesolid-state imaging element 20 shown in FIG. 2.

The solid-state imaging element 50 is configured such that 2×2 adjacentpixels share the FD.

For example, as shown in FIG. 6, the FD 29 formed between the pixels 1,2, 4, and 5 is shared by the PDs (B) 27 formed in the pixels 1, 2, 4,and 5 at the same depth, respectively. Further, the FD 32 formed betweenthe pixels 2, 3, 5, and 6 is shared by the PDs (R) 30 formed in thepixels 2, 3, 5, and 6 at the same depth, respectively. FIG. 6 alsodepicts the locations of through electrodes 25 relative to therespective pixels 1, 2, 3, 4, 5 and 6 in the plan view.

With the solid-state imaging element 50, the same advantages as those ofthe aforementioned solid-state imaging element 20 are obtained, inaddition, the number of pixel transistors is more reduced and the fineprocessing of pixels is developed.

Third Embodiment

Next, a description is given of a third configuration example (thirdembodiment) of a solid-state imaging element to which the presentdisclosure is applied with reference to FIG. 7.

FIG. 7 is a plan view of six pixels of a solid-state imaging element 60according to a third embodiment. The solid-state imaging element 60 isformed by adding a wiring 61 for connecting the FD 29 shared by thepixels 1, 2, 4, and 5 and the FD 32 shared by the pixels 2, 3, 5, and 6to the solid-state imaging element 50 according to the second embodimentshown in FIG. 6 and sharing various transistors (not shown) arranged inthe post stages of the FD 29 and the FD 32.

With the solid-state imaging element 60, the pixel transistor after theFD can also be shared. Therefore, the number of pixel transistors can bemore reduced than that of the aforementioned solid-state imaging element50 and the fine processing of the pixel can be further developed.

The transfer region of the vertical Tr 28 is separated from the transferregion of the planar Tr 31, and both thereof can be simultaneouslyoptimized, and it is advantageous for fine processing of the pixels. Inaddition, it is also possible to suppress the color mixture due to theshort-circuit of charges from adjacent pixels that can happen with therelated configuration.

Further, in the case of the solid-state imaging element 60, such aconfiguration is provided that a pixel wiring is the shortest.Therefore, advantageously, the capacity of the FD can be reduced, theconversion efficiency can be improved, another element can be arrangedat one side of the pixel, and the like.

<Manufacturing Method of the Solid-state Imaging Element 20 According toFirst Embodiment>

Next, a description is given of a manufacturing method of thesolid-state imaging element 20 according to the first embodiment withreference to FIGS. 8 and 9.

FIGS. 8 and 9 show manufacturing processing of the solid-state imagingelement 20.

First, as shown in A of FIG. 8, the PD (B) 27 is formed by implantingimpurities to the Si substrate 21 with an ion implant (I.I.). As shownin B of FIG. 8, the thickness of the Si substrate 21 is increased withepitaxial growth. As shown in C of FIG. 8, impurities are implanted withI.I., thereby forming the PD (R) 30.

Next, as shown in D of FIG. 8, the vertical Tr 28 and the planar Tr 31(not shown) are formed. As shown in A of FIG. 9, the FD 26 (not shown),and the FD 29, and the FD 32 (not shown) are formed between the pixels.As shown in B of FIG. 9, a wiring layer 71 is formed on thefront-surface side of the Si substrate 21, and the rear-surface side ofthe Si substrate 21 is polished.

Subsequently, as shown in C of FIG. 9, the through-electrode 25 isformed, and the photoelectric conversion film (G) 22 and the on-chiplens 33 are formed on the outside of the rear-surface of the Sisubstrate 21.

Note that, since manufacturing methods of the solid-state imagingelements 50 and 60 are similar, a description thereof is omitted.

<Usage Example of Image Sensor>

FIG. 10 is a diagram showing a usage example of using the aforementionedsolid-state imaging elements 20, 50, and 60.

The solid-state imaging elements 20, 50, and 60 can be used in variouscases of, e.g., sensing light such as visible light, infrared light,ultraviolet light, and X-ray.

Devices that take images used for viewing, such as a digital camera anda portable appliance with a camera function.

Devices used for traffic, such as an in-vehicle sensor that takes imagesof the front and the back of a car, surroundings, the inside of the car,and the like, a monitoring camera that monitors travelling vehicles androads, and a distance sensor that measures distances between vehiclesand the like, which are used for safe driving (e.g., automatic stop),recognition of the condition of a driver, and the like.

Devices used for home electrical appliances, such as a TV, arefrigerator, and an air conditioner, to takes images of a gesture of auser and perform appliance operation in accordance with the gesture.

Devices used for medical care and health care, such as an endoscope anda device that performs angiography by reception of infrared light.

Devices used for security, such as a monitoring camera for crimeprevention and a camera for personal authentication.

Devices used for beauty care, such as skin measurement equipment thattakes images of the skin and a microscope that takes images of thescalp.

Devices used for sports, such as an action camera and a wearable camerafor sports and the like.

Devices used for agriculture, such as a camera for monitoring thecondition of the field and crops.

Additionally, the present technology may be have the followingconfigurations:

(1)

Advantageous Effects of Invention

An imaging device comprising a substrate and a third photoelectricconversion film disposed above the substrate. A first pixel includes afirst region of a first photoelectric conversion film, a first region ofa second photoelectric conversion film, with the first and secondphotoelectric conversion films being formed in the substrate, and afirst vertical transistor connected to the first region of the firstphotoelectric conversion film. A second pixel includes a second regionof the first photoelectric conversion film, and a second region of thesecond photoelectric conversion film, with the first and secondphotoelectric conversion films being formed in the substrate, and asecond vertical transistor connected to the second region of the firstphotoelectric conversion film. A first floating diffusion is alsoincluded in the imaging device. A portion of the first region of thefirst photoelectric conversion film of the first pixel is formed betweena light incident surface of the substrate and the first verticaltransistor of the first pixel, a portion of the second region of thefirst photoelectric conversion film of the second pixel is formedbetween the light incident surface of the substrate and the secondvertical transistor of the second pixel, and the first floatingdiffusion stores charges from the first and second regions of the firstphotoelectric conversion film of the first and second pixels.

(2)

The imaging device of (1), wherein the first floating diffusion isbetween the vertical transistor of the first pixel and the verticaltransistor of the second pixel in a cross section view.

(3)

The imaging device of (1) or (2), wherein the second photoelectricconversion region of the first pixel is disposed below the firstphotoelectric conversion region of the first pixel, and the secondphotoelectric conversion region of the second pixel is disposed belowthe first photoelectric conversion region of the second pixel.

(4)

The imaging device of any of (1) to (3), further comprising:

a third pixel, including:

a third photoelectric conversion film region;

a first photoelectric conversion region, wherein the first photoelectricconversion region is formed in the substrate;

a second photoelectric conversion region, wherein the secondphotoelectric conversion region is formed in the substrate;

a vertical transistor for the first photoelectric conversion region;

a second floating diffusion, wherein the second floating diffusion isbetween the second region of the second photoelectric conversion film ofthe second pixel and the third region of the second photoelectricconversion film of the third pixel, and wherein the second floatingdiffusion stores charges from the second region of the secondphotoelectric conversion film of the second pixel and the third regionof the second photoelectric conversion film of the third pixel.

(5)

The imaging device of (4), wherein a portion of the first photoelectricconversion region of the third pixel is formed between a light incidentsurface of the substrate and the vertical transistor for the firstphotoelectric conversion region of the third pixel.

(6)

The imaging device of (4) or (5), further comprising:

a fourth pixel, including:

a fourth photoelectric conversion film region;

a first photoelectric conversion region, wherein the first photoelectricconversion region is formed in the substrate;

a second photoelectric conversion region, wherein the secondphotoelectric conversion region is formed in the substrate;

a vertical transistor for the first photoelectric conversion region;

a fifth pixel, including:

a fifth photoelectric conversion film region;

a first photoelectric conversion region, wherein the first photoelectricconversion region is formed in the substrate;

a second photoelectric conversion region, wherein the secondphotoelectric conversion region is formed in the substrate;

wherein the first floating diffusion additionally stores charges fromthe fourth region of the first photoelectric conversion film of thefourth pixel and the fifth region of the first photoelectric conversionfilm of the fifth pixel.

(7)

The imaging device of (6), wherein a portion of the first photoelectricconversion region of the third pixel is formed between a light incidentsurface of the substrate and the vertical transistor for the firstphotoelectric conversion region of the third pixel, wherein a portion ofthe first photoelectric conversion region of the fourth pixel is formedbetween a light incident surface of the substrate and the verticaltransistor for the first photoelectric conversion region of the fourthpixel, and wherein a portion of the first photoelectric conversionregion of the fifth pixel is formed between a light incident surface ofthe substrate and the vertical transistor for the first photoelectricconversion region of the fifth pixel.

(8)

The imaging device of (6) or (7), further comprising:

a sixth pixel, including:

a sixth photoelectric conversion film region;

a first photoelectric conversion region, wherein the first photoelectricconversion region is formed in the substrate;

a second photoelectric conversion region, wherein the secondphotoelectric conversion region is formed in the substrate;

wherein the second floating diffusion is additionally shared by thefifth region of the second photoelectric conversion film of the fifthpixel and the sixth region of the second photoelectric conversion filmof the sixth pixel.

(9)

The imaging device of (8), wherein a portion of the first photoelectricconversion region of the third pixel is formed between a light incidentsurface of the substrate and the vertical transistor for the firstphotoelectric conversion region of the third pixel, wherein a portion ofthe first photoelectric conversion region of the fourth pixel is formedbetween a light incident surface of the substrate and the verticaltransistor for the first photoelectric conversion region of the fourthpixel, wherein a portion of the first photoelectric conversion region ofthe fifth pixel is formed between a light incident surface of thesubstrate and the vertical transistor for the first photoelectricconversion region of the fifth pixel wherein a portion of the firstphotoelectric conversion region of the sixth pixel is formed between alight incident surface of the substrate and the vertical transistor forthe first photoelectric conversion region of the sixth pixel.

(10)

The imaging device of (8) or (9), wherein the first floating diffusionis in a region between the vertical transistors of the first, second,fourth, and fifth pixels in a plan view.

(11)

The imaging device of (10), wherein the second floating diffusion is ina region between the second photoelectric conversion regions of thesecond, third, fifth, and sixth pixels in a plan view.

(12)

The imaging device of (11), wherein the first floating diffusion and thesecond floating diffusion are disposed along a line that extends betweenthe second pixel and the fifth pixel.

(13)

The imaging device of (12), further comprising a plurality oftransistors, wherein each of the first, second, third, fourth, fifth,and sixth pixels includes at least one of the transistors for acorresponding one of the second photoelectric conversion regions.

(14)

The imaging device of (13), wherein the transistors are at leastpartially formed on a surface of the substrate that is opposite a lightincident surface of the substrate.

(15)

The imaging device of (8), wherein the first floating diffusion iscoupled to the second floating diffusion by a wiring.

(16)

The imaging device of (15), wherein the wiring is disposed between thesecond pixel and the fifth pixel in a plan view.

(17)

The imaging device of (16), wherein the photoelectric conversion film issensitive to a green component of incident light.

(18)

The imaging device of any of (1) to (17), wherein each of the firstphotoelectric conversion regions is between one of the secondphotoelectric conversion regions and one of the photoelectric conversionfilm regions.

(19)

The imaging device of any of (1) to (18), further comprising:

a first through electrode, wherein the first through electrode extendsfrom a first side of the substrate to a second side of the substrate.

(20)

The imaging device of (19), wherein the first through electrode isconnected to a bottom electrode disposed on a side of the photoelectricconversion film.

(21)

An electronic apparatus, comprising:

an imaging device, including:

a substrate;

a photoelectric conversion film disposed above the substrate;

a first pixel, including:

a first photoelectric conversion film region;

a first photoelectric conversion region, wherein the first photoelectricconversion region is formed in the substrate;

a second photoelectric conversion region, wherein the secondphotoelectric conversion region is formed in the substrate;

a vertical transistor for the first photoelectric conversion element;

a second pixel, including:

a second photoelectric conversion film region;

a first photoelectric conversion region, wherein the first photoelectricconversion region is formed in the substrate;

a second photoelectric conversion region, wherein the secondphotoelectric conversion region is formed in the substrate;

a vertical transistor for the first photoelectric conversion region;

a first floating diffusion, wherein a portion of the first photoelectricconversion region of the first pixel is formed between a light incidentsurface of the substrate and the vertical transistor for the firstphotoelectric conversion region of the first pixel,

wherein a portion of the second region of the first photoelectricconversion film of the second pixel is formed between the light incidentsurface of the substrate and the second vertical transistor of thesecond pixel, and wherein the first floating diffusion stores chargesfrom the first and second regions of the first photoelectric conversionfilm of the first and second pixels; and

a controller, wherein the controller controls operation of the imagingdevice.

(1a)

A solid-state imaging element of a vertical spectral type formed bylaminating a plurality of photoelectric conversion portions withdifferent wavelengths of light for photoelectric conversion in eachpixel region, the solid-state imaging element including:

a first photoelectric conversion portion that is formed in each pixelregion and performs photoelectric conversion according to a firstwavelength of incident light;

a first reading portion that is formed in each pixel region and readscharges converted by the first photoelectric conversion portion; and

a first storage unit that is formed between adjacent pixels and storesthe charges read by the first reading portion formed in each of theplurality of adjacent pixels.

(2a)

The solid-state imaging element according to (1a), wherein the firstreading portion is a vertical transistor.

(3a)

The solid-state imaging element according to (1a) or (2a), wherein thefirst reading portion is formed in each pixel region adjacent to thefirst storage unit formed between adjacent pixels.

(4a)

The solid-state imaging element according to any of (1a) to (3a),wherein the first storage unit is formed between two adjacent pixels,and stores the charges read by the first reading portion formed in eachof the two adjacent pixels.

(5a)

The solid-state imaging element according to any of (1a) to (3a),wherein the first storage unit is formed between 2×2 adjacent pixels,and stores the charges read by the first reading portion formed in eachof the 2×2 adjacent pixels.

(6a)

The solid-state imaging element according to any of (1a) to (5a),further including:

a second photoelectric conversion portion that is laminated on the firstphotoelectric conversion portion in each pixel region and performsphotoelectric conversion according to a second wavelength different fromthe first wavelength of the incident light;

a second reading portion that is formed in each pixel region and readscharges converted by the second photoelectric conversion portion; and

a second storage unit that is formed between adjacent pixels and storesthe charges read by the second reading portion formed in each of theplurality of adjacent pixels.

(7a)

The solid-state imaging element according to (6a), wherein the secondreading portion is a planar transistor.

(8a)

The solid-state imaging element according to (6a) or (7a), wherein thesecond reading portion is formed in each pixel region adjacent to thesecond storage unit formed between adjacent pixels.

(9a)

The solid-state imaging element according to any of (6a) to (8a),wherein the second storage unit is formed between two adjacent pixelsand stores the charges read by the second reading portion formed in eachof the two adjacent pixels.

(10a)

The solid-state imaging element according to any of (6a) to (8a),wherein the second storage unit is formed between 2×2 adjacent pixelsand stores the charges read by the second reading portion formed in eachof the 2×2 adjacent pixels.

(11a)

The solid-state imaging element according to any of (6a) to (10a),wherein the first storage unit and the second storage unit are connectedby a wiring.

(12a)

The solid-state imaging element according to any of (6a) to (11a),further including:

a third photoelectric conversion portion that is laminated on the firstand second photoelectric conversion portions in each pixel region andperforms photoelectric conversion according to a third wavelengthdifferent from the first and second wavelengths of the incident light;

a third reading portion that is formed in each pixel region and readscharges converted by the third photoelectric conversion portion; and

a third storage unit that is formed between adjacent pixels and storesthe charges read by the third reading portion.

(13a)

The solid-state imaging element according to any of (6a) to (11a),wherein the third reading portion is a through-electrode.

(14a)

The solid-state imaging element according to (12a) or (13a), wherein thethird reading portion is formed in each pixel region adjacent to thethird storage unit formed between adjacent pixels.

(15a)

The solid-state imaging element according to any of (12a) to (14a),wherein the third storage unit is formed between two adjacent pixels andstores the charges read by the third reading portion formed in each ofthe two adjacent pixels.

(16a)

The solid-state imaging element according to (12a) to (14a), wherein thethird storage unit is formed between 2×2 adjacent pixels and stores thecharges read by the third reading portion formed in each of the 2×2adjacent pixels.

(17a)

An electronic device mounted with a solid-state imaging element of avertical spectral type formed by laminating a plurality of photoelectricconversion portions with different wavelengths of light forphotoelectric conversion in each pixel region, the solid-state imagingelement including:

a first photoelectric conversion portion that is formed in each pixelregion and performs photoelectric conversion according to a firstwavelength of incident light;

a first reading portion that is formed in each pixel region and readscharges converted by the first photoelectric conversion portion; and

a first storage unit that is formed between adjacent pixels and storesthe charges read by the first reading portion formed in each of theplurality of adjacent pixels.

In addition, embodiments of the present disclosure are not limited tothe above-described embodiments, and various alterations may occurinsofar as they are within the scope of the present disclosure.

It should be understood by those skilled in the art that variousmodifications, combinations, sub-combinations and alterations may occurdepending on design requirements and other factors insofar as they arewithin the scope of the appended claims or the equivalents thereof.

REFERENCE SIGNS LIST

-   -   20 solid-state imaging element    -   21 Si substrate    -   22 photoelectric conversion film (G)    -   25 through-electrode    -   26 FD    -   27 PD (B)    -   28 vertical Tr    -   29 FD    -   30 PD (R)    -   31 planar Tr    -   32 FD    -   33 on-chip lens    -   50, 60 solid-state imaging element    -   61 wiring    -   71 wiring layer

What is claimed is:
 1. An imaging device, comprising: a substrate; afirst pixel, including: a first region of a first photoelectricconversion element, wherein the first photoelectric conversion elementis formed in the substrate; a first region of a second photoelectricconversion element, wherein the second photoelectric conversion elementis formed in the substrate; and a first vertical transistor connected tothe first region of the first photoelectric conversion element; a secondpixel including: a second region of the first photoelectric conversionelement; a second region of the second photoelectric conversion element;and a second vertical transistor connected to the second region of thefirst photoelectric conversion element; a first floating diffusion,wherein the first floating diffusion stores charges from the first andsecond regions of the first photoelectric conversion element in thefirst and second pixels; a photoelectric conversion film disposed belowthe substrate; and a first through electrode, wherein the first throughelectrode extends from a first side of the substrate to a second side ofthe substrate.
 2. The imaging device of claim 1, wherein the firstfloating diffusion is between the first vertical transistor of the firstpixel and the second vertical transistor of the second pixel in across-section view.
 3. The imaging device of claim 1, wherein the firstphotoelectric conversion element is disposed below the secondphotoelectric conversion element.
 4. The imaging device of claim 1,further comprising: a third pixel, including: a third region of thefirst photoelectric conversion element; a third region of the secondphotoelectric conversion element; and a third vertical transistorconnected to the third portion of the first photoelectric conversionelement; and a second floating diffusion, wherein the second floatingdiffusion stores charges from the second region of the secondphotoelectric conversion element of the second pixel and the thirdregion of the second photoelectric conversion element of the thirdpixel.
 5. The imaging device of claim 4, wherein the third region of thefirst photoelectric conversion element of the third pixel is formedbetween a light incident surface of the substrate and the third verticaltransistor.
 6. The imaging device of claim 4, further comprising: afourth pixel, including: a fourth region of the first photoelectricconversion element; a fourth region of the second photoelectricconversion element; and a fourth vertical transistor connected to thefourth region of the first photoelectric conversion element; a fifthpixel, including: a fifth region of the first photoelectric conversionelement; a fifth region of the second photoelectric conversion element;and a fifth vertical transistor connected to the fifth region of thefirst photoelectric conversion element, wherein the first floatingdiffusion is additionally shared by the fourth region of the firstphotoelectric conversion element of the fourth pixel and the fifthregion of the first photoelectric conversion element of the fifth pixel.7. The imaging device of claim 6, wherein a portion of the third regionof the first photoelectric conversion element of the third pixel isformed between a light incident surface of the substrate and the thirdvertical transistor of the third pixel, wherein a portion of the fourthregion of the first photoelectric conversion element of the fourth pixelis formed between the light incident surface of the substrate and thefourth vertical transistor of the fourth pixel, and wherein a portion ofthe fifth region of the first photoelectric conversion element of thefifth pixel is formed between the light incident surface of thesubstrate and the fifth vertical transistor of the fifth pixel.
 8. Theimaging device of claim 6, further comprising: a sixth pixel, including:a sixth region of the first photoelectric conversion element; a sixthregion of the second photoelectric conversion element; and a sixthvertical transistor for the sixth region of the first photoelectricconversion element, wherein the second floating diffusion isadditionally shared by the fifth region of the second photoelectricconversion element of the fifth pixel and the sixth region of the secondphotoelectric conversion element of the sixth pixel.
 9. The imagingdevice of claim 8, wherein a portion of the third region of the firstphotoelectric conversion element of the third pixel is formed between alight incident surface of the substrate and the third verticaltransistor of the third pixel, wherein a portion of the fourth region ofthe first photoelectric conversion element of the fourth pixel is formedbetween the light incident surface of the substrate and the fourthvertical transistor of the fourth pixel, wherein a portion of the fifthregion of the first photoelectric conversion element of the fifth pixelis formed between the light incident surface of the substrate and thefifth vertical transistor of the fifth pixel, wherein a portion of thesixth region of the first photoelectric conversion element of the sixthpixel is formed between the light incident surface of the substrate andthe sixth vertical of the sixth pixel.
 10. The imaging device of claim8, wherein the first floating diffusion is in a region between thefirst, second, fourth, and fifth vertical transistors of the first,second, fourth, and fifth pixels in a plan view.
 11. The imaging deviceof claim 10, wherein the second floating diffusion is in a regionbetween the second, third, fifth, and sixth regions of the secondphotoelectric conversion elements of the second, third, fifth, and sixthpixels in the plan view.
 12. The imaging device of claim 11, wherein thefirst floating diffusion and the second floating diffusion are disposedalong a line that extends between the second pixel and the fifth pixel.13. The imaging device of claim 12, wherein each of the first, second,third, fourth, fifth, and sixth pixels includes at least one verticaltransistor for a corresponding connection to one of the regions of thesecond photoelectric conversion element.
 14. The imaging device of claim13, wherein each vertical transistor is at least partially formed on asurface of the substrate that is opposite a light incident surface ofthe substrate.
 15. The imaging device of claim 8, wherein the firstfloating diffusion is coupled to the second floating diffusion by awiring.
 16. The imaging device of claim 15, wherein the wiring isdisposed between the second pixel and the fifth pixel in a plan view.17. The imaging device of claim 16, wherein the photoelectric conversionfilm is sensitive to a green component of incident light.
 18. Theimaging device of claim 1, wherein the first photoelectric conversionelement is between the photoelectric conversion film and the secondphotoelectric conversion element.
 19. The imaging device of claim 1,wherein the first through electrode is connected to a bottom electrodedisposed on a side of the photoelectric conversion film.
 20. Anelectronic apparatus, comprising: an imaging device, including: asubstrate; a first pixel, including: a first region of a firstphotoelectric conversion element, wherein the first photoelectricconversion element is formed in the substrate; a first region of asecond photoelectric conversion element, wherein the secondphotoelectric conversion element is formed in the substrate; and a firstvertical transistor connected to the first region of the firstphotoelectric conversion element; a second pixel, including: a secondregion of the first photoelectric conversion element; a second region ofthe second photoelectric conversion element; and a second verticaltransistor connected to the second region of the first photoelectricconversion element; a first floating diffusion, wherein the firstfloating diffusion stores charges from the first and second regions ofthe first photoelectric conversion element of the first and secondpixels; a photoelectric conversion film disposed below the substrate;and a first through electrode, wherein the first through electrodeextends from a first side of the substrate to a second side of thesubstrate; and a controller, wherein the controller controls operationof the imaging device.